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FDMA6676PZ - MOSFET

Description

This device is an ultra low resistance P-Channel FET.

It is designed for power line load switching applications and reverse polarity protection.

It is especially optimized for voltage rails that can climb as high as 25V.

Features

  • Max rDS(on) = 13.5 mΩ @ VGS = -10 V.
  • 25V VGS Extended Operating Rating.
  • 30V VDS Blocking.
  • 2x2mm Form Factor.
  • Low Profile - 0.8 mm maximum.
  • Integrated Protection Diode.
  • RoHS Compliant.
  • Halogen Free General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA6676PZ Single P-Channel PowerTrench® MOSFET February 2015 FDMA6676PZ Single P-Channel PowerTrench® MOSFET -30 V, -11 A, 13.5 mΩ Features „ Max rDS(on) = 13.5 mΩ @ VGS = -10 V „ 25V VGS Extended Operating Rating „ 30V VDS Blocking „ 2x2mm Form Factor „ Low Profile - 0.8 mm maximum „ Integrated Protection Diode „ RoHS Compliant „ Halogen Free General Description This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths.
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