* Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A
* Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A
* Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A
* Max.

It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for i.

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for .

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