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FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Fast switching.
  • rDS(ON) = 0.026Ω (Typ), VGS = -4.5V.
  • rDS(ON) = 0.033Ω (Typ), VGS = -2.5V.
  • rDS(ON) = 0.052Ω (Typ), VGS = -1.8V.

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Full PDF Text Transcription (Reference)

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FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features • Fast switching • rDS(ON) = 0.026Ω (Typ), VGS = -4.5V • rDS(ON) = 0.033Ω (Typ), VGS = -2.5V • rDS(ON) = 0.052Ω (Typ), VGS = -1.