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FDM3300NZ - N-Channel MOSFET

Description

This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.

Features

  • 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V.
  • > 2000v ESD Protection.
  • Low Profile.
  • 1mm maximum.
  • in the new package MicroFET 3.3x3.3 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDM3300NZ February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET   General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Features • 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V • > 2000v ESD Protection • Low Profile – 1mm maximum – in the new package MicroFET 3.3x3.
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