FDH038AN08A1 Overview
Key Features
- r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A
- Qg(tot) = 125nC (Typ.), VGS = 10V
- Internal Gate Resistor, Rg = 20Ω (Typ.)
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D
