FDG6308P Datasheet | Fairchild Semiconductor

Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications - Battery management - Load switch Features - - 0.6 A, - 20 V. RDS(ON) = 0.40 Ω @ VGS = - 4.5 V RDS(ON) = 0.55 Ω @ VGS = - 2.5 V RDS(ON) = 0.80 Ω @ VGS = - 1.8 V - Low gate charge - High performance trench technology for extremely low RDS(ON) - pact industry standard SC70-6 surface mount package S 1 or 4 Pin 1 G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1) PD TJ, TSTG Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering...