FDG6306P Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V 12V).
FDG6306P Key Features
- 0.6 A, -20 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS = -4.5 V RDS(ON) = 630 mΩ @ V GS = -2.5 V