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FDG361N Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General.

General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

  • 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V.
  • Low gate charge (3.7nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).

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