FDG361N
FDG361N is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
- 0.6 A, 100 V.
RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
- Low gate charge (3.7n C typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Applications
- Load switch
- Battery protection
- Power management
Pin 1
1 2
6 5 4
SC70-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25o C unless otherwise noted
Parameter
Ratings
100 ±20
(Note 1a)
Units
V V A W °C
0.6 2.0 0.42 0.38
- 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
300...
