FDG329N Datasheet PDF (20V N-Channel PowerTrench MOSFET) | Download Fairchild Semiconductor FDG329N

FDG329N - 20V N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V.
Fast switching speed.
Low gate charge (3.3 nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.

Datasheet Details

Part number	FDG329N
Manufacturer	Fairchild Semiconductor
File Size	79.85 KB
Description	20V N-Channel PowerTrench MOSFET
Datasheet	FDG329N Datasheet
Additional preview pages of the FDG329N datasheet.

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Full PDF Text Transcription

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FDG329N October 2001 FDG329N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V • Fast switching speed • Low gate charge (3.3 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.

Published: Mar 30, 2005 |