Fairchild Semiconductor FDG326P
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.| Part No. | FDG326P |
|---|---|
| Datasheet | FDG326P Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | P-Channel 1.8V Specified PowerTrench MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 VAPPLICATIONS
● Battery management● Load switch
● Low gate charge
● High performance trench technology for extremely low RDS(ON)
● Compact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –1.5 –6 0.75 0.48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking .26 Device FDG326P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDG326P Rev D(W) FDG326P Electrical Character...
