FDG326P Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDG326P Key Features
- 1.5 A, -20 V. RDS(ON) = 140 mΩ @ VGS = -4.5 V RDS(ON) = 180 mΩ @ VGS = -2.5 V RDS(ON) = 250 mΩ @ VGS = -1.8 V