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FDFS6N548 - Integrated N-Channel PowerTrench MOSFET and Schottky Diode

General Description

The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Key Features

  • Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode January 2007 FDFS6N548 30V, 7A, 23mΩ Features Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. tm „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A „ VF < 0.45V @ 2A VF < 0.