FDFS6N303 Datasheet | Fairchild Semiconductor

October 2001 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. Features 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS...