FDFS6N303 Datasheet (PDF) Download
Fairchild Semiconductor
FDFS6N303

Description

Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package.

Key Features

  • RDS(ON) = 0.035 Ω @ VGS = 10 V
  • R DS(ON) = 0.050 Ω @ VGS = 4.5 V
  • VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A
  • Schottky and MOSFET incorporated into single power surface mount SO-8 package
  • General purpose pinout for design flexibility
  • Ideal for DC/DC converter applications