FDFME2P823ZT datasheet, diode equivalent, Fairchild Semiconductor

FDFME2P823ZT diode equivalent, integrated p-channel powertrench mosfet and schottky diode.

Features and benefits

General Description
* Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
* Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
* Max rDS(on) = 331 mΩ at VGS = .

Description

* Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
* Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
* Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
* Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
* Low profile: 0.55 m.

Image gallery