FDF5680 Datasheet | Fairchild Semiconductor

Description 60V N-Channel Power Trench TM MOSFET Features • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trend technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. TO-220 S FDP Series TC = 25°C unless otherwise noted TO-263AB FDB Series Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP5680 60 ±20 40 120 65 0.43 FDB5680 Units V V A W W/°C °C - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range -65 to +175 Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.3 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB5680 FDP5680 Device FDB5680 FDP5680 Reel Size 13’’ Tube Tape Width 24mm...