40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trend technology for extremely low RDS(ON). 175°C maximum junction temperature rating. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or.
FDP5680/FDB5680
July 2000
FDP5680/FDB5680
General Description
60V N-Channel PowerTrenchTM MOSFET
Features
40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trend technology for extremely low RDS(ON). 175°C maximum junction temperature rating.
FDF5680 Datasheet
