FDD850N10LD diode equivalent, n-channel powertrench mosfet + diode.
* RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
* RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
* Low Gate Charge (Typ. 22.2 nC)
* Low Crss (Typ. 42 pF.
* LED Monitor Backlight
* LED TV Backlight
* LED Lighting
* Consumer Appliances, DC-DC converter (Step u.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward v.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 778.71KB)