FDD850N10LD
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.
Key Features
- RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
- RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
- Low Gate Charge (Typ. 22.2 nC)
- Low Crss (Typ. 42 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS compliant
