* Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
* Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
* HBM ESD protection level > 7kv typical
* RoHS Compliant
* Qua.

* Inverter
* Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD84.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applicat.

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