FDD8453LZ_F085 Datasheet | Fairchild Semiconductor

Features - Typ r DS(on) = 5mΩ at VGS = 10V, ID = 15A - Typ r DS(on) = 6mΩ at VGS = 4.5V, ID = 13A - HBM ESD protection level > 7kv typical - Ro HS pliant - Qualified to AEC Q101 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications - Inverter - Synchronous Rectifier Package S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev. C1 Symbol 1 .fairchildsemi. FDD8453LZ_F085 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package limited) -Pulsed EAS Single Pulse Avalanche Energy Power Dissipation Dreate above 25o C TJ, TSTG Operating and Storage Temperature Thermal Characteristics TC = 25°C (Note 1) RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient, 1in2 copper pad area Ratings 40 ±20 50 Figure4 88 118 0.79 -55 to +...