900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FDD7N25LZ Datasheet

MOSFET

No Preview Available !

FDD7N25LZ
N-Channel UniFETTM MOSFET
250 V, 6.2 A, 550 m
Features
• RDS(on) = 430 m(Typ.) @ VGS = 10 V, ID = 3.1 A
• Low Gate Charge (Typ.12 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
March 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
S
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
1
S
FDD7N20LZ
250
±20
6.2
3.7
25
115
5.5
5.6
10
56
0.45
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDD7N20LZ
2.2
110
Unit
oC/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD7N25LZ Datasheet

MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDD7N25LZ
Device
FDD7N25LZ
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate to Body Leakage Current, Forward
Gate to Body Leakage Current, Reverse
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to 25oC
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125oC
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
250
-
-
-
-
-
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 3.1A
VGS = 5V, ID = 3.1A
VDS = 20V, ID = 3.1A
1.0
-
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 250V ID = 6.2A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 6.2A
VGS = 10V, RG = 25
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.2A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 6.2A
dIF/dt = 100A/s
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.25
-
-
-
-
-
0.43
0.45
7
480
65
8
12
1.5
4
10
15
75
30
-
-
-
130
0.6
Quantity
2500
Max. Unit
-V
- V/oC
1
A
10
10 A
-10 A
2.0 V
0.55
0.57
-S
635 pF
85 pF
12 pF
16 nC
- nC
- nC
30 ns
40 ns
160 ns
70 ns
5.5 A
20 A
1.4 V
- ns
- C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, IAS = 6.2A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
2
www.fairchildsemi.com


Part Number FDD7N25LZ
Description MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
PDF Download

FDD7N25LZ Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FDD7N25LZ MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy