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FDD6N50TM_F085 Datasheet, Fairchild Semiconductor

FDD6N50TM_F085 mosfet equivalent, 500v n-channel mosfet.

FDD6N50TM_F085 Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 891.86KB)

FDD6N50TM_F085 Datasheet

Features and benefits


* 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
* Low gate charge ( typical 12.8 nC)
* Low Crss ( typical 9 pF)
* Fast switching
* 100% avalanche tested
* .

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FDD6N50TM_F085 Page 1 FDD6N50TM_F085 Page 2 FDD6N50TM_F085 Page 3

TAGS

FDD6N50TM_F085
500V
N-Channel
MOSFET
Fairchild Semiconductor

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