FDD6796
Features
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
- Max r DS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A
- Max r DS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A
- 100% UIL tested
- Ro HS pliant
Applications
- Vcore DC-DC for Desktop puters and Servers
- VRM for Intermediate Bus Architecture
D -PA K TO -2 52 (TO -252)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
.. Symbol VDS
VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 40 69 20 100 39 42 3.7 -55...
