FDD6796 Overview
Key Features
- Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A
| Part | FDD6796 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 320.74 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |