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FDD6796 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Max rDS(on) = 5.7 mΩ at VGS = 10

Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6796 N-Channel PowerTrench® MOSFET May 2008 FDD6796 N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A „ 100% UIL tested „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G S D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.
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