Datasheet Details
| Part number | FDD6780A |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 400.27 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDD6780A Datasheet
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| Part number | FDD6780A |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 400.27 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDD6780A Datasheet
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Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G S D-PAK (TO-252) D G G D S Short-Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 25 ±20 30 48 16.4 100 24 32.6 3.7 -55 to +175 Units V V A mJ W °C RθJC Thermal Resistance, Junction to Case TO-252, TO-251 4.6 RθJA Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 40 Package Marking and Ordering Information °C/W Device Marking FDD6780A FDU6780A Device FDD6780A FDU6780A_F071 Package D-PAK (TO-252) TO-251AA Reel Size 13 ’’ N/A(Tube) Tape Width 16 mm N/A Quantity 2500 units 75 units ©2009 Fairchild Semiconductor Corporation 1 FDD6780A / FDU6780A_F071 Rev.
FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET March 2015 25 V, 8.
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