Datasheet4U Logo Datasheet4U.com

FDD6780A - N-Channel MOSFET

General Description

Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD6530A 20V N-Channel Power MOSFET ON Semiconductor
FDD6606 30V N-Channel PowerTrench MOSFET Advanced Analogic Technologies
FDD6630A N-Channel MOSFET On Semiconductor
FDD6685 30V P-Channel MOSFET ON Semiconductor
FDD6N50 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDD6780 N-Channel Power Trench MOSFET
FDD6782A N-Channel MOSFET
FDD6760A N-Channel MOSFET
FDD6770A N-Channel MOSFET
FDD6776A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET March 2015 25 V, 8.6 mΩ Features General Description „ Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A „ Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.