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FDD6780 - N-Channel Power Trench MOSFET

Description

June 2009 Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either

Features

  • General.

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FDD6780 N-Channel PowerTrench® MOSFET FDD6780 N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description June 2009 „ Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A „ Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
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