Datasheet Details
| Part number | FDD6780 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 265.72 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
 FDD6780 Datasheet
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| Part number | FDD6780 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 265.72 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
FDD6780 Datasheet
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June 2009 Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G S D DTO-P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 25 ±20 30 49 16.5 70 40 33 3.7 -55 to +175 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 4.5 40 °C/W Device Marking FDD6780 Device FDD6780 Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDD6780 Rev.C1 1 www.fairchildsemi.com FDD6780 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±20 V
FDD6780 N-Channel PowerTrench® MOSFET FDD6780 N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.
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