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FDD6776A - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Max rDS(on) = 7.5 mΩ at VGS = 10

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench® MOSFET 25 V, 7.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 17.7 A „ Max rDS(on) = 17.0mΩ at VGS = 4.5 V, ID = 13.2 A „ 100% UIL test „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.