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FDD6760A N-Channel MOSFET

FDD6760A Description

FDD6760A N-Channel Power Trench® MOSFET January 2009 FDD6760A N-Channel PowerTrench® MOSFET 25 V, 3.2 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDD6760A Features

* Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 21 A
* 100% UIL test

FDD6760A Applications

* Vcore DC-DC for Desktop Computers and Servers
* VRM for Intermediate Bus Architecture D D G S G D-PAK TO -252 (TO-252) S www. DataSheet4U. com Symbol VDS VGS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain C

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