Datasheet Details
| Part number | FDD6760A |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 368.53 KB |
| Description | N-Channel MOSFET |
| Download | FDD6760A Download (PDF) |
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Overview: FDD6760A N-Channel Power Trench® MOSFET January 2009 FDD6760A N-Channel PowerTrench® MOSFET 25 V, 3.
| Part number | FDD6760A |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 368.53 KB |
| Description | N-Channel MOSFET |
| Download | FDD6760A Download (PDF) |
|
|
|
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G S G D-PAK TO -252 (TO-252) S www.DataSheet4U.com Symbol VDS VGS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 50 131 27 200 72 65 3.7 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.3 40 °C/W Package Marking and Ordering Information Device Marking FDD6760A Device FDD6760A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDD6760A Rev.C 1 www.fairchildsemi.com FDD6760A N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±
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