Datasheet Summary
FDD6696/FDU6696
December 2002
FDD6696/FDU6696
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
- 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V
- Low gate charge (17nC typical)
- Fast switching
- High performance trench technology for extremely low RDS(ON)
Applications
- DC/DC converter
- Motor drives
I-PAK (TO-251AA) G D S
D-PAK TO-252 (TO-252)
T A=25oC unless otherwise...