FDD6696
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
- 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V
- Low gate charge (17n C typical)
- Fast switching
- High performance trench technology for extremely low RDS(ON)
Applications
- DC/DC converter
- Motor drives
I-PAK (TO-251AA) G D S
D-PAK TO-252 (TO-252)
T A=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS V GSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
30 ± 16 50 13 100 52 3.8 1.6
- 55 to +175
Unit s
Power Dissipation
@TC=25°C @TA =25°C @TA =25°C
TJ , TSTG
Operating and Storage Junction Temperature...
