FDD6690A Datasheet | Fairchild Semiconductor

March 2015 30V N-Channel Power Trench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications - DC/DC converter - Motor Drives Features - 46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V - Low gate charge - Fast Switching Speed - High performance trench technology for extremely low RDS(ON) S DTO-P-2A5K2...