FDD6680S Overview
Description
The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Key Features
- 55 A, 30 V RDS(ON) = 11 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky body diode
- Low gate charge (17nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
