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FDD6676AS - 30V N-Channel PowerTrench SyncFET

General Description

The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V.
  • Includes SyncFET schottky body diode.
  • Low gate charge (46nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • RoHS Compliant D G S DTO-P-2A5K2 (TO-252) Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Curren.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6676AS FDD6676AS 30V N-Channel PowerTrench® SyncFET™ April 2008 tm General Description The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. Applications • DC/DC converter • Low side notebook Features • 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.