FDD6676
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Key Features
- 78 A, 30 V RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
- Low gate charge
- Fast Switching
- High performance trench technology for extremely low RDS(ON)
