Datasheet4U Logo Datasheet4U.com

FDD6670AL - 30V N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features

  • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD6606 30V N-Channel PowerTrench MOSFET Advanced Analogic Technologies
FDD6630A N-Channel MOSFET On Semiconductor
FDD6685 30V P-Channel MOSFET ON Semiconductor
FDD6530A 20V N-Channel Power MOSFET ON Semiconductor
FDD6N50 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDD6670A N-Channel MOSFET
FDD6670S 30V N-Channel MOSFET
FDD6672A null30V N-Channel PowerTrench MOSFET
FDD6676 30V N-Channel PowerTrench MOSFET
FDD6676AS 30V N-Channel PowerTrench SyncFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD6670AL May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.
Published: |