FDD6670A
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 66 A, 30 V RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.5 V
- Low gate charge
- Fast Switching
- High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S
