FDD6637 Datasheet | Fairchild Semiconductor

FDD6637 35V P-Channel PowerTrench® MOSFET March 2015 35V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications - Inverter - Power Supplies Features - - 55 A, - 35 V RDS(ON) = 11.6 mΩ @ VGS = - 10 V RDS(ON) = 18 mΩ @ VGS = - 4.5 V - High performance trench technology for extremely low RDS(ON) - RoHS pliant S DTO-P-2A5K2 (TO-252)...