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FDD6637 - 35V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.

Inverter Power Supplies

Key Features

  • 55 A,.
  • 35 V RDS(ON) = 11.6 mΩ @ VGS =.
  • 10 V RDS(ON) = 18 mΩ @ VGS =.
  • 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings VDSS VDS(Avalanche) VGSS ID PD TJ, TSTG Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=.

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FDD6637 35V P-Channel PowerTrench® MOSFET March 2015 FDD6637 35V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications • Inverter • Power Supplies Features • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.