FDD6637
Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
Key Features
- -55 A, -35 V RDS(ON) = 11.6 mΩ @ VGS = -10 V RDS(ON) = 18 mΩ @ VGS = -4.5 V
- High performance trench technology for extremely low RDS(ON)
- RoHS Compliant *
