Datasheet Details
| Part number | FDD6612A |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 264.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 FDD6612A Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Key Features
- 30 A, 30 V RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V.
- Low gate charge.
- Fast Switching.
- High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) PD TJ, TSTG Power Dissi.