Datasheet4U Logo Datasheet4U.com

FDD6530A - 20V N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features

  • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V.
  • Low gate charge (6.5 nC typical).
  • Fast switching.

📥 Download Datasheet

📁 Similar Datasheet

  • FDD6530A - 20V N-Channel Power MOSFET (ON Semiconductor)
  • FDD6606 - 30V N-Channel PowerTrench MOSFET (Advanced Analogic Technologies)
  • FDD6630A - N-Channel MOSFET (On Semiconductor)
  • FDD6685 - 30V P-Channel MOSFET (ON Semiconductor)
  • FDD6N50 - N-Channel MOSFET (ON Semiconductor)
  • FDD6N50TM-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDD01 - DC-AC CONCERTER (Chinfa Electronics Ind)
  • FDD03-xxx - DC-DC Converter (Chinfa electronics)
  • FDD03U - DC-AC CONVERTER (Chinfa Electronics Ind)
  • FDD05 - DC-DC CONVERTER (ETC)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDD6530A July 2001 FDD6530A 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V • Low gate charge (6.5 nC typical) • Fast switching Applications • DC/DC converter • Motor drives • High performance trench technology for extremely low RDS(ON) .
Published: |