FDD6512A Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features - 36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 31 mΩ @ VGS = 2.5 V - Low gate charge (12 n C typical) - Fast switching - High performance trench technology for extremely low RDS(ON) Applications - DC/DC converter - Motor drives I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 20 ± 12 36 10.7 100 43 3.8 1.6 - 55 to +175 Units Power Dissipation @TC=25°C @TA=25°C @TA=25°C TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.5 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6512A FDU6512A Device FDD6512A FDU6512A Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units...