42 A, 30 V
RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 22 mΩ @ VGS = 4.5 V.
Low gate charge (22 nC typical).
Fast switching.
High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed.