• 42 A, 30 V
RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 22 mΩ @ VGS = 4.5 V
• Low gate charge (22 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise .