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FDD5N50F - N-Channel MOSFET

Download the FDD5N50F datasheet PDF. This datasheet also covers the FDD5N50FTM_WS variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 1.25Ω (Typ. ) @ VGS = 10 V, ID = 1.75 A.
  • Low Gate Charge (Typ. 11 nC).
  • Low Crss (Typ. 5 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDD5N50FTM_WS-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD5N50FTM_WS — N-Channel UniFETTM FRFET® MOSFET February 2015 FDD5N50FTM_WS N-Channel UniFETTM FRFET® MOSFET 500 V, 3.5 A, 1.55 Ω Features • RDS(on) = 1.25Ω (Typ.) @ VGS = 10 V, ID = 1.75 A • Low Gate Charge (Typ. 11 nC) • Low Crss (Typ. 5 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.