FDD4685
Description
Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A High performance trench technology for extremely low rDS(on) RoHS Compliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
