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FDD4243_F085 - P-Channel PowerTrench MOSFET

Key Features

  • Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A.
  • Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A.
  • Typ Qg(TOT) = 21nC at VGS = -10V.
  • High performance trench technology for extremely low rDS(on).
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FDD4243_F085 P-Channel PowerTrench® MOSFET FDD4243_F085 P-Channel PowerTrench® MOSFET -40V, -14A, 64mΩ Features „ Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A „ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A „ Typ Qg(TOT) = 21nC at VGS = -10V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Inverter „ Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4243_F085 Rev. C 1 www.fairchildsemi.