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FDD4243 - P-Channel MOSFET

General Description

Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant November 2006 This P-Channel MOSFET has been produced using Fairchild Semiconductor’s propr

Key Features

  • General.

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FDD4243 40V P-Channel PowerTrench® MOSFET FDD4243 40V P-Channel PowerTrench® MOSFET -40V, -14A, 44mΩ Features General Description „ Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A „ Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant November 2006 This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Application „ Inverter „ Power Supplies S G S D www.DataSheet4U.