FDD4141 Datasheet | Fairchild Semiconductor

.. FDD4141 P-Channel Power Trench® MOSFET July 2007 P-Channel Power Trench® MOSFET -40V, -50A, 12.3mΩ Features - Max r DS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A - Max r DS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A - High performance trench technology for extremely low r DS(on) - Ro HS pliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary Power Trench® technology to deliver low r DS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications - Inverter - Power Supplies D -PA K TO -2 52 (TO -252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings -40 ±20 -50 -58 -10.8 -100 337 69 2.4 -55 to +150 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.8 52 °C/W Package Marking and Ordering Information Device Marking FDD4141 ©2007 Fairchild Semiconductor Corporation FDD4141 Rev.C Device FDD4141 Package D-PAK (TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units .fairchildsemi....