FDD3N50NZ Datasheet | Fairchild Semiconductor

Features - RDS(on) = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A - Low Gate Charge (Typ. 6.2 n C) - Low Crss (Typ. 2.5 p F) - 100% Avalanche Tested - Improved dv/dt Capability - ESD Imoroved Capability - Ro HS pliant Applications - LCD/LED/PDP TV - Lighting - Uninterruptible Power Supply November 2013 Description Uni FETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows Uni FET II MOSFET to withstand over 2k V HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D-PAK Absolute Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate Above 25o C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDD3N50NZTM 500 ±25 2.5 1.5 10 114 2.5 4 10 40...