FDD3N40 Key Features
- RDS(on) = 3.4 Ω (Typ.) @ VGS = 10 V, ID = 1 A
- Low Gate Charge (Typ. 4.5 nC)
- Low Crss (Typ. 3.7 pF)
- 100% Avalanche Tested
| Part Number | Description |
|---|---|
| FDD3N50NZ | N-Channel UniFET II MOSFET |
| FDD306P | MOSFET |
| FDD3510H | Dual N&P-Channel MOSFET |
| FDD3570 | 80V N-Channel PowerTrench MOSFET |
| FDD3580 | 80V N-Channel PowerTrench MOSFET |