Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Consumer Applicances
LED TV
Synchronous Rectificatio
Features
- RDS(on) = 33.4 m (Typ. ) @ VGS = 10 V, ID = 26 A.
- RDS(on) = 42.2 m (Typ. ) @ VGS = 4.5 V, ID = 20 A.
- Fast Switching Speed.
- Low Gate Charge, QG = 17.6 nC (Typ. ).
- High Performance Trench Technology for Extremely Low
RDS(on).
- High Power and Current Handling Capability.
- RoHS Compliant.
FDD390N15ALZ Datasheet
