FDD390N15ALZ
Features
- RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A
- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A
- Fast Switching Speed
- Low Gate Charge, QG = 17.6 n C (Typ.)
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Consumer Applicances
- LED TV
- Synchronous Rectification
- Uninterruptible Power Supplies
- Micro Solar Inverter
D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS dv/dt
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain...
