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FDD390N15A - MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

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Features

  • RDS(on) = 33.5 m ( Typ. )@ VGS = 10 V, ID = 26 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 14.3 nC( Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD390N15A — N-Channel PowerTrench® MOSFET FDD390N15A N-Channel PowerTrench® MOSFET 150 V, 26 A, 40 m April 2015 Features • RDS(on) = 33.5 m ( Typ.)@ VGS = 10 V, ID = 26 A • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC( Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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