FDD3690 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V - Low gate charge (28n C typical) - Fast Switching - High performance trench technology for extremely low RDS(ON) - High power and current handling capability D-PAK TO-252 (TO-252) TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C Pulsed Power Dissipation @TC=25°C @TA=25°C @TA=25°C (Note 3) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 100 ±20 22 75 60 3.8 1.6 - 55 to +175 Units TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.5 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD3690 Device FDD3690 Reel Size 13’’ Tape width 16mm Quantity 2500 units 2001 Fairchild Semiconductor Corp. FDD3690 Rev C(W) Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter...