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FDD3690 - 100V N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

  • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V.
  • Low gate charge (28nC typical).
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C Pulsed Power Dissipation.

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Datasheet Details

Part number FDD3690
Manufacturer Fairchild Semiconductor
File Size 84.01 KB
Description 100V N-Channel PowerTrench MOSFET
Datasheet download datasheet FDD3690 Datasheet
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FDD3690 April 2001 FDD3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 22 A, 100 V.
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