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FDD3680 - 100V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • 25 A, 100 V. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V.
  • Low gate charge (38 nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
  • Continuous.
  • Pulsed T A=25oC unless otherwise noted Parame.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD3680 February 2001 FDD3680 100V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 25 A, 100 V. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V • Low gate charge (38 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.