Datasheet Summary
March 2015
N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ
Features
- rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
- Qg(tot) = 24nC (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
Formerly developmental type 82760
GATE
DRAIN (FLANGE)
SOURCE
TO-252AA
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
EAS PD TJ, TSTG
Parameter Drain to Source Voltage
Gate to...