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FDD3672 - N-Channel MOSFET

Features

  • rDS(ON) = 24mΩ (Typ. ), VGS = 10V, ID = 44A.
  • Qg(tot) = 24nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).

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FDD3672 FDD3672 March 2015 N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.
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