FDD3672
Features
- r DS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
- Qg(tot) = 24n C (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
Formerly developmental type 82760
GATE
DRAIN (FLANGE)
SOURCE
TO-252AA
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
EAS PD TJ, TSTG
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 100o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, RθJA = 52o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25o C
Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to...
