FDD2670 - 200V N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDD2670 Datasheet Preview — Preview of FDD2670 PDF

Datasheet Details

Part number	FDD2670
Manufacturer	Fairchild ↗ Semiconductor
File Size	95.40 KB
Description	200V N-Channel PowerTrench MOSFET
Datasheet	FDD2670_FairchildSemiconductor.pdf

FDD2670 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
Continuous.
Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1) Units V V A W 3.6.

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Published: Mar 30, 2005 |