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FDD2612

FDD2612 Fairchild Semiconductor 200V N-Channel PowerTrench MOSFET

Title N채널 200V 4.9A(Ta) 42W(Ta) 표면 실장 TO-252,(D-Pak)
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current...
Features
• 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical) Applications
• DC/DC converter D D G G S TO-252 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Volt...

Datasheet PDF File FDD2612 Datasheet - 110.96KB
Distributor Distributor
DigiKey
Stock 2261 In stock
Price
360 units: 1151.211 KRW
BuyNow BuyNow BuyNow - Manufacturer a Rochester Electronics LLC FDD2612

FDD2612   FDD2612   FDD2612  



FDD2612 Distributor

Distributor Stock Price BuyNow
Distributor
DigiKey
2261
360 units: 1151.211 KRW
Rochester Electronics LLC

BuyNow
Distributor
Rochester Electronics
2261
1000 units: 0.7155 USD
500 units: 0.7576 USD
100 units: 0.7913 USD
25 units: 0.825 USD
1 units: 0.8418 USD
Fairchild Semiconductor Corporation

BuyNow




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