FDD2612 mosfet equivalent, 200v n-channel powertrench mosfet.
* 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* DC/DC converter
D
D G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-S.
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