FDD18N20LZ
Overview
- R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A
- Low Gate Charge (Typ. 30 nC)
- Low CRSS (Typ. 25 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS Compliant
| Part | FDD18N20LZ |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 1.13 MB |
Related Datasheets
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